NOVEL DIGITAL PHOTOSENSOR CELL IN GAAS IC USING CONVERSION OF LIGHT-INTENSITY TO PULSE FREQUENCY

Authors
TANAKA K ANDO F TAKETOSHI K OHISHI I ASARI G
Citation
K. Tanaka et al., NOVEL DIGITAL PHOTOSENSOR CELL IN GAAS IC USING CONVERSION OF LIGHT-INTENSITY TO PULSE FREQUENCY, JPN J A P 1, 32(11A), 1993, pp. 5002-5007
Citations number
8
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
32
Issue
11A
Year of publication
1993
Pages
5002 - 5007
Database
ISI
SICI code
Abstract
A photoelectric GaAs integrated circuit that converts light intensity to digital signal frequency has been fabricated using the GaAs MES-FET process. The circuit includes a metal-semiconductor-metal photodiode (MSM-PD), a preamplifier (PA), a Schmitt trigger (ST), a flip-flop (FF ) (1-bit digital counter) and a reset (Rt) FET. This sensor cell has a wide dynamic range of over 5 decades of incident light power and a ga mma characteristic suitable for an image pickup device.