INTERFACIAL BARRIER CHARACTERISTICS OF LT-GAAS ON LOW DOPED GAAS-LAYERS

Authors
LIPKA KM SPLINGART B ZHANG X POESE M PANZLAFF K KOHN E
Citation
Km. Lipka et al., INTERFACIAL BARRIER CHARACTERISTICS OF LT-GAAS ON LOW DOPED GAAS-LAYERS, Materials science & engineering. B, Solid-state materials for advanced technology, 22(1), 1993, pp. 55-60
Citations number
8
Categorie Soggetti
Material Science","Physics, Condensed Matter
Journal title
Materials science & engineering. B, Solid-state materials for advanced technology → ACNP
ISSN journal
09215107
Volume
22
Issue
1
Year of publication
1993
Pages
55 - 60
Database
ISI
SICI code
0921-5107(1993)22:1<55:IBCOLO>2.0.ZU;2-D
Abstract
As-grown (sigma-conductive) and annealed (semi-insulating (SI)) low te mperature (LT)-GaAs/n-GaAs and LT-GaAs/p-GaAs double layers have been analysed by conductivity profiling. The sigma-LT-GaAs/GaAs junction re presents an N-T(+)/GaAs junction with no noticeable depletion effects in the sigma-LT-GaAs. The SI-LT-GaAs/GaAs junction is an SI(n(-))-GaAs / GaAs junction with depletion effects in LT-GaAs. The Fermi-level of the LT-GaAs lies in all cases above the n-GaAs free surface potential and is estimated to satisfy 0.18 eV < \ E(c) - E(F)\ < Phi(s).