TEMPERATURE-MEASUREMENTS OF LT GAAS DIODES

We have grown ion temperature (LT) GaAs by molecular beam epitaxy in o rder to study its insulating properties. The LT GaAs exhibits trap fil led limited (TFL) conduction. The TFL conduction mechanism is correlat ed with the measurement of a double peak on X-ray diffraction patterns . Therefore, it is connected to the presence of an excess of arsenic. Diodes realized on LT GaAS were fabricated and measured from 77 K to r oom temperature. The dependence of the low field resistivity and the b reakdown voltage vs. temperature is analysed. The variation with the l ayer thickness is also shown. In contrast to diodes realized on GaAs g rown at higher temperature, the breakdown voltage exhibits excellent u niformity.