FEASIBILITY OF FORMATION OF IN0.52AL0.48AS FILMS ISOPERIODIC WITH THEINP SUBSTRATES BY LIQUID-PHASE EPITAXY AT LOW (SIMILAR-TO-650-DEGREES-C) TEMPERATURES

Authors
BER BY BYSTROV SD ZUSHINSKII DA KORNYAKOVA OV TUAN L NOVIKOV SV SAVELEV IG TRETYAKOV VV CHALDYSHEV VV SHMARTSEV YV
Citation
By. Ber et al., FEASIBILITY OF FORMATION OF IN0.52AL0.48AS FILMS ISOPERIODIC WITH THEINP SUBSTRATES BY LIQUID-PHASE EPITAXY AT LOW (SIMILAR-TO-650-DEGREES-C) TEMPERATURES, Semiconductors, 27(9), 1993, pp. 818-820
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
9
Year of publication
1993
Pages
818 - 820
Database
ISI
SICI code
1063-7826(1993)27:9<818:FOFOIF>2.0.ZU;2-H
Abstract
A technology was developed to obtain epitaxial In0.52Al0.48As films, i soperiodic with InP substrates, using the method of liquid phase epita xy at low (approximately 650-degrees-C) temperatures. The result was c onfirmed by investigations of the Auger electron and photoluminescence spectra, by an x-ray microspectroscopic analysis, and by galvanomagne tic measurements.