OSCILLATIONS OF THE PHOTOCONDUCTIVITY AND CHARACTERISTIC FEATURES OF THE RELAXATION KINETICS OF A-SI-H

Authors
BUDAGYAN BG AIVAZOV AA STANOVOV ON
Citation
Bg. Budagyan et al., OSCILLATIONS OF THE PHOTOCONDUCTIVITY AND CHARACTERISTIC FEATURES OF THE RELAXATION KINETICS OF A-SI-H, Semiconductors, 27(9), 1993, pp. 822-825
Citations number
21
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
27
Issue
9
Year of publication
1993
Pages
822 - 825
Database
ISI
SICI code
1063-7826(1993)27:9<822:OOTPAC>2.0.ZU;2-B
Abstract
High-temperature (80-200-degrees-C) oscillations of the photoconductiv ity of a-Si:H films, which were detected previously have been studied. A correlation has been established between this effect and the charac teristics of the kinetics of relaxation of the structurally inhomogene ous material. The parameters of the oscillations were found to be cont rolled by the diffusion of hydrogen between states at internal boundar ies and in the bulk of the material, and the changes in the parameters with time were described by a stretched exponential function.