ISOTHERMAL AND THERMALLY STIMULATED RELAXATION OF THE CURRENT AND CAPACITANCE IN A WEAKLY ASYMMETRIC P-N-JUNCTION WITH AN INHOMOGENEOUS DOPING PROFILE IN THE N-TYPE AND P-TYPE REGIONS

A theory of isothermal and thermally stimulated relaxation of the curr ent and capacitance in a p-n junction is proposed. No restrictions are placed on the concentrations of shallow impurities and trapping cente rs in the n- and p-type regions and the presence of concentration prof iles is permitted. The problem of the positions of a peak of the therm ally stimulated current and of the inflection point of the thermally s timulated capacitance is solved for the homogeneous case as a function of the impurity and trapping center concentrations. Model-based calcu lations of the parameters of relaxation associated with charge transfe r involving one type of deep centers on both sides of the junction are carried out and several characteristic features are reported. These f eatures include nonmonotonic relaxation of the capacitance due to a no nuniform distribution of impurities. This relaxation corresponds to a complex capacitive transient spectroscopy spectrum. Experimental resul ts are reported for a slightly asymmetric p-n junction in GaAs. These results are described quantitatively by the proposed theory. The captu re from the Debye tails and the Poole-Frenkel effect are taken into ac count in the evaluation of the results.