CRITICAL CONCENTRATION OF OXYGEN IN CZ-SI AND CLUSTERIZATION OF IMPURITY ATOMS DURING ANNEALING

Experimental data for the processes of clusterization of oxygen and of the formation and annealing of the A centers in annealed silicon grow n by the Czochralski method (Cz-Si) are presented. These results can b e explained qualitatively by postulating the presence of two types of microinhomogeneities in the distribution of oxygen in the original mat erial. The dominant inhomogeneity is governed by the concentration of oxygen in the original Cz-Si, compared with the critical concentration of this impurity.