PULSED MAGNETRON SPUTTER TECHNOLOGY

At present, a new development trend is becoming evident in which the i ntroduction of a pulsed mode for magnetron sputtering seems to be very promising with respect to process stability and layer quality. For in stance, the deposition of TiN requires a plasma density that cannot be attained in normal operation. Here the pulsed mode allows a higher pl asma density to be obtained without exceeding the thermal rating of th e substrate. In this way, for example, it has been possible to attain bias currents up to 10 mA cm-2. By using several pulse-controlled smal l magnetron sources in an array, the alloy composition or film thickne ss distribution can be adjusted by electronic means. The ever-growing demand for sandwich structures and gradient layers opens new applicati ons for pulsed sputter technology. The reactive deposition of highly i nsulating layers, eg. SiO2, TiO2 and Al2O3, has turned out to be rathe r unsatisfactory up to now. Randomly grown insulating layers on target , anode and plasma-confining electrodes prevent a stable operation. Th e disturbing effects caused by drifting potential distributions and ar cing can be restricted by introducing the pulsed mode in the medium fr equency range. With Al2O3, for example, defect densities due to arcing were reduced by three to four orders of magnitude. At rates of 240 nm min-1, the coating operation could be maintained for many hours. A re view is given on the present state of activities in the field of pulse d magnetron sputtering. Based on practical examples, the capabilities inherent in this technique are discussed and further development trend s derived. In our opinion, pulsed magnetron sputter technology is an i nnovation of great practical significance.