METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM COPPER(II) DIMETHYLAMINO ETHOXIDE

Citation
Vl. Young et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM COPPER(II) DIMETHYLAMINO ETHOXIDE, Chemistry of materials, 5(12), 1993, pp. 1701-1709
Citations number
43
Categorie Soggetti
Chemistry Physical","Material Science
Journal title
ISSN journal
08974756
Volume
5
Issue
12
Year of publication
1993
Pages
1701 - 1709
Database
ISI
SICI code
0897-4756(1993)5:12<1701:MCOCFC>2.0.ZU;2-0
Abstract
Copper metal films were grown on single-crystal strontium titanate (10 0) by the thermal decomposition of copper dimethylamino ethoxide in in ert atmosphere at temperatures between 150 and 270-degrees-C. Films gr own at 200-degrees-C are copper metal, free from contaminants, while h igher temperatures result in significant carbon and oxygen incorporati on. Deposition products were identified by Fourier transform infrared spectroscopic analysis of the reactor gas phase in situ and by mass sp ectroscopic analysis of the reactor exit gas during deposition. At 200 -degrees-C, deposition occurs by interdependent beta-hydride eliminati on and reductive elimination reactions which produce (dimethylamino)et hanal, (dimethylamino)ethanol, and copper metal. Beta-Hydride and redu ctive elimination reactions are also dominant at 250-degrees-C; howeve r, the competition of ligand fragmentation reactions with the whole-li gand eliminating reactions leads to carbon and oxygen contamination of the copper metal film.