Vl. Young et al., METALORGANIC CHEMICAL-VAPOR-DEPOSITION OF COPPER FROM COPPER(II) DIMETHYLAMINO ETHOXIDE, Chemistry of materials, 5(12), 1993, pp. 1701-1709
Copper metal films were grown on single-crystal strontium titanate (10
0) by the thermal decomposition of copper dimethylamino ethoxide in in
ert atmosphere at temperatures between 150 and 270-degrees-C. Films gr
own at 200-degrees-C are copper metal, free from contaminants, while h
igher temperatures result in significant carbon and oxygen incorporati
on. Deposition products were identified by Fourier transform infrared
spectroscopic analysis of the reactor gas phase in situ and by mass sp
ectroscopic analysis of the reactor exit gas during deposition. At 200
-degrees-C, deposition occurs by interdependent beta-hydride eliminati
on and reductive elimination reactions which produce (dimethylamino)et
hanal, (dimethylamino)ethanol, and copper metal. Beta-Hydride and redu
ctive elimination reactions are also dominant at 250-degrees-C; howeve
r, the competition of ligand fragmentation reactions with the whole-li
gand eliminating reactions leads to carbon and oxygen contamination of
the copper metal film.