LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITION OF SILICON DIOXIDE USING DIETHYLSILANE

In this study, diethylsilane (DES) has been used as a precursor to pro duce silicon dioxide films by low-pressure chemical vapor deposition. These films were synthesized in the temperature range 350-475-degrees- C with the growth kinetics observed to follow an Arrhenius behavior wi th an apparent activation energy of 10 kcal/mol. The growth rate was s een to increase with higher pressure and to vary as a function of the square root of the O2 flow rate and 02/DES ratio. In both the pressure and the O2/DES ratio studies conducted at 400-degrees-C, film deposit ion ceased abruptly for conditions where total pressure was less than 0.35 Torr and where the 02/DES ratio was higher than 2.35. The density and index of refraction of the films were close to 2.25 g/cm3 and 1.4 5, respectively, independent of deposition conditions. The etch rate o f the films in a 25-degrees-C P-etch solution decreased with higher de position or annealing temperatures, reflecting densification of the ma terial. For aspect ratios close to 1.3, the films exhibited a step cov erage better than 55%.