CHEMICAL-VAPOR-DEPOSITION OF RUTHENIUM AND OSMIUM THIN-FILMS USING (HEXAFLUORO-2-BUTYNE)TETRACARBONYLRUTHENIUM AND TETRACARBONYLOSMIUM

The known mononuclear ruthenium complex Ru(hfb)(CO)4, where hfb stands for hexafluoro-2-butyne, has a vapor pressure of 1.5 Torr at 25-degre es-C and forms reflective ruthenium thin films by chemical vapor depos ition (CVD) using H-2 carrier gas with a growth rate of 21 nm/min at 5 00-degrees-C. The resistivity of a ruthenium film having a grain size of 60 nm was 22 muOMEGA cm. Auger electron spectroscopy (AES), X-ray p hotoelectron spectroscopy (XPS), and X-rav diffraction (XRD) analyses indicated that the films were pure, polycrystalline ruthenium (< 1% C, 0, or F). Scanning electron microscopy and XRD analyses revealed that the deposition temperature and the presence of H-2 gas affect the mic rostructure and the resistivity of the films. Os(hfb)(CO)4 afforded po lycrystalline osmium thin films using H-2 as a carrier gas. A growth r ate of 14 nm/min, a resistivity of 81 muOMEGA cm, and a grain size of 20 nm were found for depositions conducted at 600-degrees-C. XPS analy sis indicated that the film consists of 84% Os, 7% 0, and 9% C. The ne w dinuclear metal complexes M2[mu-eta1:eta1:eta4-C4(CF3)4](CO)6 (M = R u, Os) were formed from M(hfb)(CO)4 during the CVD processes conducted in the absence of H-2 gas at the temperature range 150-300-degrees-C.