RADIATION HARDNESS OF MOLYBDENUM SILICON MULTILAYERS DESIGNED FOR USEIN A SOFT-X-RAY PROJECTION LITHOGRAPHY SYSTEM

A molybdenum silicon multilayer is irradiated with 13.4-nm radiation t o investigate changes in multilayer performance under simulated soft-x -ray projection lithography (SXPL) conditions. The wiggler-undulator a t the Berlin electron storage ring BESSY is used as a quasi-monochroma tic source of calculable spectral radiant intensity and is configured to simulate an incident SXPL x-ray spectrum. The test multilayer recei ves a radiant exposure of 240 J/mm2 in an exposure lasting 8.9 h. The corresponding average incident power density is 7.5 mW/mm2. The absorb ed dose of 7.8 x 10(10) J/kg (7.8 x 10(12) rad) is equivalent to 1.2 t imes the dose that would be absorbed by a multilayer coating on the fi rst imaging optic in a hypothetical SXPL system during 1 year of opera tion. Surface temperature increases do not exceed 2-degrees-C during t he exposure. Normal-incidence reflectance measurements at lambda0 = 13 .4 nm performed before radiation exposure are in agreement with measur ements performed after the exposure, indicating that no significant da mage had occurred.