JUNCTIONS OF PR-CO-O THIN-FILMS AND SEMIC ONDUCTIVE BATIO3 AND THEIR ELECTRICAL-PROPERTIES

Thin films of a mixture system of Pr-Co-O were deposited on quartz gla ss substrates by RF sputtering. The films of Pr-O were polycrystalline , but addition of Co inhibited the crystallization of the films. As in creasing Co content of the films, the electrical conductivities increa sed and their activation energies decreased. The same films were also deposited on semiconductive BaTiO3 ceramics to form hetero-junctions. Forward current of the junctions abruptly rose at about 2 V, and the r ising voltage was independent on the film composition. On the other ha nd, reverse current of the junctions increased with increasing of Co c ontent, but abrupt rising of the current was not observed. Capacitance of Pr-O thin film-BaTiO3 junction was about 0.1 muF/CM2, and increase d to about 0.9 muF/CM2 by addition of Co.