EPITAXIAL INTEGRATION OF SINGLE-CRYSTAL C-60

Citation
Ja. Dura et al., EPITAXIAL INTEGRATION OF SINGLE-CRYSTAL C-60, Applied physics letters, 63(25), 1993, pp. 3443-3445
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
25
Year of publication
1993
Pages
3443 - 3445
Database
ISI
SICI code
0003-6951(1993)63:25<3443:EIOSC>2.0.ZU;2-N
Abstract
Single crystal thin films of (111) oriented C60 are grown on epitaxial layers of single crystal antimony. The C60/Sb epitaxy is confirmed by low-energy electron diffraction which indicates that the [110BAR] in- plane directions are parallel in the two layers. X-ray diffraction sho ws that the C60 film is entirely (111) oriented and of high quality wi th sharp Bragg peaks and narrow mosaic spread. In this study the Sb fi lms were grown on GaSb, to which they are lattice matched; however, si nce Sb can be epitaxially grown on surfaces with a large lattice misma tch this technique may be applied to integrate C60 single crystals ont o many substrates or devices with a surface having sixfold symmetry.