SOLID-PHASE EPITAXY OF RELAXED, IMPLANTATION-AMORPHIZED SI1-XGEX ALLOY LAYERS GROWN ON COMPOSITIONALLY GRADED BUFFERS

Solid phase epitaxial regrowth of implantation-amorphized, relaxed Si0 .75Ge0.25 alloy layers grown by molecular beam epitaxy on compositiona lly graded buffer layers was investigated with ion channeling techniqu es. The amorphization was done by Ge implantation. The regrowth veloci ty follows an Arrhenius curve in the investigated temperature range, 4 71 less-than-or-equal-to T less-than-or-equal-to 506-degrees-C, with a n activation energy, E(a)=2.76+/-0.15 eV, equal to published values fo r Si. The regrowth velocity, however, is enhanced by almost a factor o f 5 in this temperature range as compared to Si.