FABRICATION OF GAAS NANOSTRUCTURES WITH A SCANNING TUNNELING MICROSCOPE

A method for fabricating GaAs nanostructures with a scanning tunneling microscope (STM) is presented. Utilizing a previously developed Si ST M fabrication technique, the STM is used to pattern a thin (5 nm) epit axial Si layer which is grown on GaAs. The patterned Si layer is used as a mask for wet etching the GaAs. This fabrication technique is quit e general and should extend to other material systems provided a surfa ce epitaxial Si layer can be grown.