OPTICAL CONTROL OF MICROWAVES WITH SEMICONDUCTOR N-I-P-I STRUCTURES

Authors
KOST A WEST L HASENBERG TC WHITE JO MATLOUBIAN M VALLEY GC
Citation
A. Kost et al., OPTICAL CONTROL OF MICROWAVES WITH SEMICONDUCTOR N-I-P-I STRUCTURES, Applied physics letters, 63(25), 1993, pp. 3494-3496
Citations number
17
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
25
Year of publication
1993
Pages
3494 - 3496
Database
ISI
SICI code
0003-6951(1993)63:25<3494:OCOMWS>2.0.ZU;2-O
Abstract
We control the microwave transmission of a GaAs n-i-p-i structure by i lluminating it with a cw argon ion laser. Tests in a broadband microwa ve modulator wave spectrometer show that an optical intensity of 800 m W/cm2 produces a 50% change in transmission for microwaves between 10 and 50 GHz.