MAGNETRON SPUTTER-DEPOSITION WITH HIGH-LEVELS OF METAL IONIZATION

Citation
Sm. Rossnagel et J. Hopwood, MAGNETRON SPUTTER-DEPOSITION WITH HIGH-LEVELS OF METAL IONIZATION, Applied physics letters, 63(24), 1993, pp. 3285-3287
Citations number
16
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
24
Year of publication
1993
Pages
3285 - 3287
Database
ISI
SICI code
0003-6951(1993)63:24<3285:MSWHOM>2.0.ZU;2-I
Abstract
A new deposition technique has been developed which combines conventio nal magnetron sputter deposition with a rf inductively coupled plasma (RFI). The RFI plasma is located in the region between the magnetron c athode and the sample position, and is set up by a metal coil immersed in the plasma. A large fraction of the metal atoms sputtered from the magnetron cathode are ionized in the RFI plasma. By placing a negativ e bias on the sample, metal ions are then accelerated across the sampl e sheath and deposited at normal incidence. Results from a gridded ene rgy analyzer configured with a microbalance collector and located at t he sample position indicate the level of ionization is low at a few mT orr and rises to > 80% at pressures in the 25-35 mTorr range. Optical measurements of metal ion and neutral emission lines show scaling of t he relative ionization to higher discharge powers. Significant cooling of the plasma electron temperature is observed when high concentratio ns of metal atoms were sputtered into the plasma.