Efficient solar energy conversion with CuInS2 thin films is reported.
The copper-rich p-type absorber is prepared by thermal coevaporation.
A copper to indium ratio between 1.0 and 1.8 can be tolerated with sma
ll (less-than-or-equal-to 10%) solar-to-electrical conversion losses.
Copper excess phases (CuS) are removed chemically. The cell structure
glass/Mo/p-CuInS2/n-CdS/n+-ZnO/Al delivers 10.2% at simulated AM 1.5 c
onditions. The device properties are discussed based on its energy ban
d diagram.