STUDY OF THE INTERFACE-STATE FORMATION AT DIFFERENT TEMPERATURES

The interface-state formation caused by a negative gate bias in a poly crystalline silicon gate-oxide-semiconductor capacitor versus injectin g temperature in the range of 77-400 K is studied. It is found that th is interface-state generation is temperature independent in this range of temperatures, which indicates that the motion of the mobile specie s (as the hydrogen-related species) through the SiO2 toward the Si/SiO 2 interface seems unlikely. One assumes that this no thermal activatio n agrees with the break of Si-Si or Si-O distorted bonds at the Si/SiO 2 interface caused by injecting hot electrons during stress.