EFFECT OF DIAMOND FACET ON THE ELECTRICAL-PROPERTIES OF PT BF-2+ ION-IMPLANTED POLYCRYSTALLINE DIAMOND CONTACTS/

Citation
Yt. Cheng et al., EFFECT OF DIAMOND FACET ON THE ELECTRICAL-PROPERTIES OF PT BF-2+ ION-IMPLANTED POLYCRYSTALLINE DIAMOND CONTACTS/, Applied physics letters, 63(24), 1993, pp. 3344-3346
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
63
Issue
24
Year of publication
1993
Pages
3344 - 3346
Database
ISI
SICI code
0003-6951(1993)63:24<3344:EODFOT>2.0.ZU;2-H
Abstract
Very good quality of polycrystalline diamond films with different majo r facets were grown on the Si(100) substrates at different position of the plasma ball in a microwave plasma enhanced chemical vapor deposit ion chamber. Pt/BF2+ ion implanted polycrystalline diamond contacts we re fabricated to examine the effect of diamond facets on their electri cal properties. The Pt/diamond contact exhibited Schottky characterist ics for the diamond film with major facet (100). In contrast, the Pt/d iamond contact exhibited ohmic behavior for the diamond film with majo r facet (111). The I-V characteristics of the Pt/BF2+ ion implanted po lycrystalline diamond contacts were not reliable if the diamond facet factor was not considered.