ORIGIN OF THE LOW DOPING EFFICIENCY OF NITROGEN ACCEPTORS IN ZNSE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

Authors
KAMATA A MITSUHASHI H FUJITA H
Citation
A. Kamata et al., ORIGIN OF THE LOW DOPING EFFICIENCY OF NITROGEN ACCEPTORS IN ZNSE GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Applied physics letters, 63(24), 1993, pp. 3353-3354
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
63
Issue
24
Year of publication
1993
Pages
3353 - 3354
Database
ISI
SICI code
0003-6951(1993)63:24<3353:OOTLDE>2.0.ZU;2-R
Abstract
The origin of nitrogen acceptor compensation in ZnSe:N has been studie d by secondary ion mass spectrometry (SIMS) and infrared absorption (F TIR) measurements. Nitrogen-doped ZnSe layers were grown by atmospheri c pressure metalorganic chemical vapor deposition. Ammonia gas was use d as a nitrogen source. SIMS analysis has revealed that hydrogen was i ncorporated only into the ZnSe:N layer with the same concentration as nitrogen. FTIR measurements at 11 K strongly suggest the presence of N -H bonding at 3193 cm-1. It is concluded that hydrogen passivation is responsible for the acceptor compensation.