In this paper we demonstrate how low energy electron microscopy can be
used to study in situ, and in real time, the growth of thin films on
single-crystal surfaces. By studying the growth of Ge and Ag on both t
he clean and the Sb-terminated Si(lll) surface we show how nucleation,
growth, island formation, island shapes, thermal stability and the fo
rmation of dislocations in the grown films may be observed. Pre-adsorp
tion of Sb strongly modifies the growth of Ge and Ag films on Si(lll),
leading to more uniform coverage and smoother films in both cases.