Molybdenum nitride thin films were deposited using reactive r.f. magne
tron sputtering. Single phase gamma-Mo2N films having f.c.c. structure
and exhibiting metallic conductivity have been obtained over a wide r
ange of nitrogen partial pressures. The temperature dependence of resi
stivity studied in the range 30-300 K showed a negative temperature co
efficient of resistivity for all the films. The activation energy was
found to be temperature dependent, indicating that conduction in these
films is dominated by carrier hopping through localized states in the
intergranular region. SEM studies on Al/Mo2N/Si structures revealed t
he resistance of these films to Al-Si interdiffusion. Without any post
-deposition annealing treatment, Mo2N/Si were found to be perfectly oh
mic, with a specific contact resistivity similar to-2.6 x 10(3) Omega
mu m(2). These characteristics point towards the potential use of this
compound as diffusion barrier in Si-based microelectronic devices.