IMPROVED NEAR-INFRARED DETECTORS

The paper describes the properties of a new large area InGaAs photodio de with near unity internal quantum efficiency. Measurements of linear ity, spatial uniformity and dark current of the photodiodes are presen ted and compared with measurements on germanium photodiodes. The paper also describes the performance of a detector constructed from an arra ngement of three of these photodiodes and shows how it has a calculabl e responsivity from 980 nm to 1 640 nm. It also describes how such a d etector can be used as a sensor for a fibre-optic power meter with an uncertainty of around 0,1 %.