ANISOTROPY OF DIELECTRIC PERMITTIVITY IN UNIAXIALLY STRESSED NARROW-GAP SEMICONDUCTORS

Authors
VASKO FT PESETSKY BI STRIKHA MV
Citation
Ft. Vasko et al., ANISOTROPY OF DIELECTRIC PERMITTIVITY IN UNIAXIALLY STRESSED NARROW-GAP SEMICONDUCTORS, UKRAINSKII FIZICHESKII ZHURNAL, 38(8), 1993, pp. 1201-1204
Citations number
13
Categorie Soggetti
Physics
Journal title
UKRAINSKII FIZICHESKII ZHURNAL → ACNP
ISSN journal
02023628
Volume
38
Issue
8
Year of publication
1993
Pages
1201 - 1204
Database
ISI
SICI code
0202-3628(1993)38:8<1201:AODPIU>2.0.ZU;2-K
Abstract
The strain-induced anisotropy of permittivity, caused by the virtual i nterband transitions in narrow-gap semiconductors is studied. The grea t phase shift between the waves polarized along and perpendicular to d eformation with their propagation through the deformed crystal is pred icted. Numerical calculations are made for InSb and Cd0.2Hg0.8Te.