KINETICS AND MORPHOLOGY OF SILICON PRECIP ITATION FROM SI2CL6

Silicon precipitation reaction was conducted on non-crystalline quartz glass substrate from the hydrogen reduction of Si2Cl6 at temperatures from 873 approximately 1273 K using a horizontal cold wall reactor. T he precipitation rate was measured under various experimental conditio ns and precipitation morphology was observed by X-ray diffraction anal ysis and SEM. The precipitation rate is one order of magnitude larger than those of other silicon source gases. In the condition when the re action is controlled by a surface reaction (873 approximately 1073 K), the rate dependence on Si2Cl6 and H-2 are proportional to 1/2 order o f the former and to the first order of the latter, respectively. From XRD and SEM results, Si precipitated at 1073 K has a preferred crystal orientation in the [110] direction.