REACTIVE ION MILLING - THINNING OF COMPOUND SEMICONDUCTORS

Authors
PECZ B BARNA A
Citation
B. Pecz et A. Barna, REACTIVE ION MILLING - THINNING OF COMPOUND SEMICONDUCTORS, Vacuum, 45(1), 1994, pp. 1-3
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
Vacuum → ACNP
ISSN journal
0042207X
Volume
45
Issue
1
Year of publication
1994
Pages
1 - 3
Database
ISI
SICI code
0042-207X(1994)45:1<1:RIM-TO>2.0.ZU;2-M
Abstract
The different reactive ion milling techniques used for the preparation of specimens for transmission electron microscopy are discussed. The most important III-V and II-VI compound semiconductors can be thinned by ion milling. In the cases of In containing semiconductors and CdTe the iodine treatment is very efficient A simple method to prepare arte fact free sample surfaces is shown by the examples of InP samples. Sam ple cooling is not needed in our procedure.