A model is presented in which the texture adopted by TiN films made by
plasma-enhanced physical vapor deposition (PVD) methods is affected b
y the lattice defects formed during growth. It is proposed that the de
fects formed are those whose formation absorbs a maximum amount of the
energy accompanying the deposition process. Specifically, in sub- and
stoichiometric films, extrinsic dislocation loops are formed on (111)
planes by migration (diffusion or channeling) which then cause the [1
11] growth texture to be preferred by the film. In super-stoichiometri
c films, the additional nitrogen is incorporated as dumb-bell pairs in
second nearest neighbor tetrahedral sites oriented in the [200] or [2
20] directions which cause these to be the favored growth textures. It
is considered that the trapped argon is associated with the extrinsic
loops in the former case.