ZINC-OXIDE FILMS PREPARED BY DC REACTIVE MAGNETRON SPUTTERING AT DIFFERENT SUBSTRATE TEMPERATURES

The properties of zinc oxide films prepared by dc reactive magnetron s puttering were studied over a range of the substrate temperatures (roo m temperature to 450-degrees-C). The dependence of the structure of th e films on the substrate temperature was studied using scanning electr on microscopy and X-ray diffraction. The films had a preferred orienta tion along the (002) crystal plane at room temperature (50-degrees-C), a random orientation at 200-300-degrees-C and again a preferred orien tation along the (002) crystal plane at 350-450-degrees-C. The grain s ize increased as the substrate temperature was raised. In addition, th e optical and electrical properties have also been investigated.