EPITAXY OF FCC METALS ON DIELECTRIC SUBSTRATES

Epitaxial films of evaporated Cu, Ag, Al, Au and Ni have been grown on single crystalline dielectric substrates (c-cut Al2O3 and (100) MgO) under high vacuum conditions (p almost-equal-to 5 x 10(-6) mbar). The films were characterized by X-ray diffraction, RHEED, Nomarski microsc ope and Talystep profiler. Epitaxial growth is observed with substrate temperature T(s) > 200-degrees-C. In all cases the orientation film t o substrate was for sapphire (111) metal \\ (00.1 sapphire) [211BAR] m etal \\ [21.0] sapphire, and for MgO (100) metal \\ (100) MgO [001] me tal \\ [001] MgO.