INTERFACIAL REACTION OF AG TI THIN-FILMS ON A SILICA SUBSTRATE/

Double and triple layer films of Ag-Ti system were deposited on silica (fused quartz) substrates and annealed at 800 K for 1 h under vacuum (10(-4) Pa). Atomic interaction between the film and the substrate due to the annealing was observed using Auger electron spectroscopy. The annealing segregates Ti atoms both at the film surface and the interfa ce between metallic film and silica substrate. Directly deposited Ti a toms on silica decomposed SiO2 bonds without annealing but Ti atoms se gregating at the interface did not. The behaviour of titanium can be e xplained in terms of the affinity for oxygen. This was suggested by th e change in the peak height ratio of Ti-L23M23M45/Ti-L23M23M23 related to the valence Auger transition.