STUDIES ON CARRIER LIFETIME IN HEAVILY-DOPED INGAASP

Authors
DE SS GHOSH AK BERA M HAZRA AK HALDAR JC
Citation
Ss. De et al., STUDIES ON CARRIER LIFETIME IN HEAVILY-DOPED INGAASP, Canadian journal of physics, 71(11-12), 1993, pp. 582-585
Citations number
17
Categorie Soggetti
Physics
Journal title
Canadian journal of physics → ACNP
ISSN journal
00084204
Volume
71
Issue
11-12
Year of publication
1993
Pages
582 - 585
Database
ISI
SICI code
0008-4204(1993)71:11-12<582:SOCLIH>2.0.ZU;2-5
Abstract
A model is developed to study the carrier lifetime and quantum efficie ncy in heavily doped InGaAsP. In the analysis, bandgap narrowing, carr ier degeneracy, and nonparabolicity of the band structure are consider ed as heavy doping effects. The variations of carrier lifetime and qua ntum efficiency with nominal current density at a given temperature ar e studied through numerical analysis.