NONREACTIVE METAL-SEMICONDUCTOR INTERFACES - A COMBINED AES, AFM AND PAC STUDY

Authors
KRAUSCH G COLCHERO J DETZEL T FINK R LUCKSCHEITER B WOHRMANN U SCHATZ G
Citation
G. Krausch et al., NONREACTIVE METAL-SEMICONDUCTOR INTERFACES - A COMBINED AES, AFM AND PAC STUDY, Hyperfine interactions, 78(1-4), 1993, pp. 295-301
Citations number
10
Categorie Soggetti
Physics, Atomic, Molecular & Chemical","Physics, Nuclear","Physics, Condensed Matter
Journal title
Hyperfine interactions → ACNP
ISSN journal
03043843
Volume
78
Issue
1-4
Year of publication
1993
Pages
295 - 301
Database
ISI
SICI code
0304-3843(1993)78:1-4<295:NMI-AC>2.0.ZU;2-A
Abstract
Thin In films on Ge(100), Si(100) and Si(111) are investigated using A uger-electron spectroscopy (AES), atomic force microscopy (AFM) and pe rturbed gammagamma-angular correlation (PAC) spectroscopy, respectivel y. The growth mode of the metal films is characterized by in situ AES measurements, indicating distinct differences between the different su bstrate surfaces. Additional AFM investigations are used to monitor th e film topography at higher metal coverage. Finally, the local crystal line structure of the films is studied by the PAC technique.