POSITRON-ANNIHILATION IN ELECTRON-IRRADIATED CZ-SI

Authors
UEDONO A UJIHIRA Y IKARI A HAGA H YODA O
Citation
A. Uedono et al., POSITRON-ANNIHILATION IN ELECTRON-IRRADIATED CZ-SI, Hyperfine interactions, 79(1-4), 1993, pp. 615-619
Citations number
7
Categorie Soggetti
Physics, Atomic, Molecular & Chemical","Physics, Nuclear","Physics, Condensed Matter
Journal title
Hyperfine interactions → ACNP
ISSN journal
03043843
Volume
79
Issue
1-4
Year of publication
1993
Pages
615 - 619
Database
ISI
SICI code
0304-3843(1993)79:1-4<615:PIEC>2.0.ZU;2-D
Abstract
Defects in electron irradiated Ct-Si were studied by the positron anni hilation technique. In order to know effects of the thermal history of crystals on the introduction of defects, the specimen was quenched fr om 1390 degrees C to room temperature before irradiation. A clear corr elation between results obtained by the positron annihilation experime nts and those by infrared spectroscopy was established. From the isoch ronal annealing experiment, it was found that oxygen clusters were int roduced by quenching treatments.