INTERSTITIAL RELATED DEFECT OF B-L2 IMPLANTED INTO N-TYPE AND P-TYPE SILICON

Authors
FRANK HP ALMEIDA T DIEHL E ERGEZINGER KH FISCHER B ITTERMANN B MAI F SEELINGER W WEISSENMAYER S WELKER G ACKERMANN H STOCKMANN HJ
Citation
Hp. Frank et al., INTERSTITIAL RELATED DEFECT OF B-L2 IMPLANTED INTO N-TYPE AND P-TYPE SILICON, Hyperfine interactions, 79(1-4), 1993, pp. 655-658
Citations number
12
Categorie Soggetti
Physics, Atomic, Molecular & Chemical","Physics, Nuclear","Physics, Condensed Matter
Journal title
Hyperfine interactions → ACNP
ISSN journal
03043843
Volume
79
Issue
1-4
Year of publication
1993
Pages
655 - 658
Database
ISI
SICI code
0304-3843(1993)79:1-4<655:IRDOBI>2.0.ZU;2-T
Abstract
beta-radiation detected nuclear magnetic resonance (beta-NMR) measurem ents of B-12 occupying sites with noncubic surroundings after implanta tion into Si have been extended from p-type to moderately doped n-type material. The quadrupole split signals observed in both materials ind icate the existence of the same interstitial related boron defect but with lower thermal stability in n-type Si.