SUBMILLIMETER EPR EVIDENCE FOR THE AS ANTISITE DEFECT IN GAAS (REPRINTED FROM SOLID-STATE COMMUN, VOL 36, PG 15-17, 1980)

Authors
WAGNER RJ KREBS JJ STAUSS GH WHITE AM
Citation
Rj. Wagner et al., SUBMILLIMETER EPR EVIDENCE FOR THE AS ANTISITE DEFECT IN GAAS (REPRINTED FROM SOLID-STATE COMMUN, VOL 36, PG 15-17, 1980), Solid state communications, 88(11-12), 1993, pp. 887-889
Citations number
15
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
88
Issue
11-12
Year of publication
1993
Pages
887 - 889
Database
ISI
SICI code
0038-1098(1993)88:11-12<887:SEEFTA>2.0.ZU;2-K
Abstract
A new EPR spectrum has been observed in semi-insulating GaAs with a su bmillimeter laser magnetic resonance spectrometer. The spectrum is iso tropic with g = 2.04 +/- 0.01 at nu = 11.236 cm-1. The hyperfine inter action parameter Absolute value of A (I = 3/2) is 0.090 +/- 0.001 cm-1 . The spectrum is attributed to the As antisite defect in GaAs and the parameters are compatible with the P antisite defect in GaP.