GALVANOMAGNETIC LUMINESCENCE OF DOPED SEM ICONDUCTORS

Positive and negative luminescence of p-InSb has been theoretically an d experimentally studied under the conditions of magnetoconcentrationa l effect. The luminescence dependence on the doping level has been stu died for a wide range of the surface recombination rate at the light-e mitting crystal facc. The effect of the doping level on the character of luminescence field-dependence intensity is shown. The doping level and the field value at which the extrinsic semiconductor luminescence intensity is higher than that of the intrinsic one are determined. The method for determination of parameters of the narrow-gap semiconducto rs was developed for the temperatures equal or higher than the room te mperature.