20 GBIT S OPERATION OF A HIGH-EFFICIENCY INGAASP/INGAASP MQW ELECTROABSORPTION MODULATOR WITH 1.2-V DRIVE VOLTAGE/

Authors
DEVAUX F DORGEUILLE F OUGAZZADEN A HUET F CARRE M CARENCO A HENRY M SOREL Y KERDILES JF JEANNEY E
Citation
F. Devaux et al., 20 GBIT S OPERATION OF A HIGH-EFFICIENCY INGAASP/INGAASP MQW ELECTROABSORPTION MODULATOR WITH 1.2-V DRIVE VOLTAGE/, IEEE photonics technology letters, 5(11), 1993, pp. 1288-1290
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
5
Issue
11
Year of publication
1993
Pages
1288 - 1290
Database
ISI
SICI code
1041-1135(1993)5:11<1288:2GSOOA>2.0.ZU;2-V
Abstract
We fabricated a ridge waveguide electroabsorption modulator based on t he quantum-confined Stark effect in InGaAsP/InGaAsP multiple quantum-w ells. The drive voltage for 12-dB extinction ratio is 1.2 V, whereas t he frequency response is flat within 2 dB from de to 20 GHz. 20 Gb/s o peration is presented. Extensive data concerning the parasitic phase m odulation (chirping) are reported for the first time as a function of applied bias and operating wavelength.