108-GHZ GAINAS INP P-I-N PHOTODIODES WITH INTEGRATED BIAS TEES AND MATCHED RESISTORS/

Authors
WEY YG GIBONEY KS BOWERS JE RODWELL MJW SILVESTRE P THIAGARAJAN P ROBINSON GY
Citation
Yg. Wey et al., 108-GHZ GAINAS INP P-I-N PHOTODIODES WITH INTEGRATED BIAS TEES AND MATCHED RESISTORS/, IEEE photonics technology letters, 5(11), 1993, pp. 1310-1312
Citations number
7
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
5
Issue
11
Year of publication
1993
Pages
1310 - 1312
Database
ISI
SICI code
1041-1135(1993)5:11<1310:1GIPPW>2.0.ZU;2-0
Abstract
Connections to bulk bias tees and various mis-matched loads degrade th e usable frequency response of high-speed photodetectors. Monolithic i ntegration of passive components to enhance the realizable performance of high-bandwidth, long-wavelength photodiodes is demonstrated. Circu its having bias tees and matched resistors integrated with 7-mu m x 7- mu m photodiodes show unsable electrical bandwidths exceeding 100 GHz.