POLYFURAN - A NEW SYNTHETIC APPROACH AND ELECTRONIC-PROPERTIES

Citation
S. Glenis et al., POLYFURAN - A NEW SYNTHETIC APPROACH AND ELECTRONIC-PROPERTIES, Journal of the American Chemical Society, 115(26), 1993, pp. 12519-12525
Citations number
58
Categorie Soggetti
Chemistry
ISSN journal
00027863
Volume
115
Issue
26
Year of publication
1993
Pages
12519 - 12525
Database
ISI
SICI code
0002-7863(1993)115:26<12519:P-ANSA>2.0.ZU;2-6
Abstract
Polyfuran films have been synthesized by electropolymerization of terf uran and investigated as a function of film preparation conditions in both the doped and undoped state. These films have been characterized by infrared spectroscopy, scanning electron microscopy, optical absorp tion, X-ray photoelectron spectroscopy, dc conductivity, and electron spin resonance measurements. The electrolyte anion (dopant) used for t he preparation of these films heavily influences the pi-conjugated sys tem of the polymer backbone. Structural disorder and doping level depe nds on the nature of the electrolyte anion. CF3SO3- was found to be th e best dopant and to cause the least structural disorder or furan ring opening. Electrical conductivities as high as 2 X 10(-3) S/Cm were ob tained in the CF3SO3--doped state. The temperature dependence of the e lectrical conductivity indicates a thermally activated process with se miconductor-like behavior. The charge transport properties are explain ed in terms of polaron and bipolaron states. The polymer band gap was measured at 2.35 eV.