Temperature-dependent Raman spectroscopy is used to investigate the ef
fect of superconductivity on the near-surface electronic structure of
a semiconductor in good electrical contact with a superconductor. The
light scattering is performed through a high-quality thin (60-100 Angs
trom) film of Nb, grown directly onto in-situ Ar+-etched (100)-n(+)InA
s. Below T-c, the LO mode, associated with the surface charge accumula
tion layer in the InAs, is enhanced by similar to 40% in comparison wi
th the nearby L_ bulk phonon mode. This change, reversible upon temper
ature cycling, is observed only when the Nb is in good electrical cont
act with the InAs. Preliminary results show a similar effect on NbN/In
As. Our results constitute the first optical detection of the supercon
ducting proximity effect.