4 TYPES AND ORIGINS OF TRANSIENT SI WAFER DEFORMATION WITH FURNACE INSERTION AND WITHDRAWAL

Authors
Citation
M. Itsumi et J. Kai, 4 TYPES AND ORIGINS OF TRANSIENT SI WAFER DEFORMATION WITH FURNACE INSERTION AND WITHDRAWAL, JPN J A P 1, 32(12A), 1993, pp. 5468-5472
Citations number
4
Categorie Soggetti
Physics, Applied
Volume
32
Issue
12A
Year of publication
1993
Pages
5468 - 5472
Database
ISI
SICI code
Abstract
Several types of transient deformations (200-1000 mum) of silicon wafe rs, observed when the wafers are inserted into or withdrawn from a hot horizontal furnace, are shown to be due to small asymmetries (2-10 mu m) in the actual wafer shapes. Saddle-type deformation during the inse rtion process is categorized in two types along axes which are at righ t angles. The type of deformation depends on a small difference (asymm etry) between the extent of deformation in two crystallographically eq uivalent (100) directions with the same Young's modulus. During withdr awal, two kinds of bowl-type deformations (concave and convex) are obs erved. This is also due to small inherent deformations (asymmetry) in the original wafers.