M. Shirahama et al., CHARACTERIZATION OF CARBON-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXYUSING NEOPENTANE AS CARBON SOURCE, JPN J A P 1, 32(12A), 1993, pp. 5473-5478
Neopentane C(CH-3)4, has been successfully used as a new carbon source
in the molecular beam epitaxial MBE growth of carbon-doped GaAs. The
hole concentration, which agrees with the carbon concentration, increa
ses with increasing cracking temperature in the temperature range abov
e 700-degrees-C. The highest hole concentration obtained using neopent
ane is 1.6 x 10(20) cm-3. Optical and electrical properties of a MBE-g
rown C-doped GaAs layer with neopentane are comparable to those of a m
etalorganic molecular beam epitaxy (MOMBE) grown C-doped GaAs layer us
ing TMG and solid arsenic and MBE-grown Be-doped GaAs. The maximum hol
e concentration of 1.6 X 10(20) cm-3 increases to 2.5 x 10(20) cm-3 af
ter annealing at 400-degrees-C for 1 h in N2 ambient. This is due to r
emoval of hydrogen which passivates carbon acceptors in the as-grown G
aAs.