CHARACTERISTICS OF BATIO3 FILMS PREPARED BY PULSED-LASER DEPOSITION

BaTiO3 thin films possessing ferroelectric characteristics have been s uccessfully synthesized using the laser ablation technique. The films are polycrystalline when deposited with substrate temperature higher t han 550-degrees-C at 1 mbar oxygen pressure. All of the films are high ly textured and dominated by (111) grains. The zero-voltage dielectric constant and ferroelectricity derived from C-V measurement increase w ith substrate temperature. The best properties obtained are epsilon(r) =485, P(r)=0.32 muC/cm2, P(s)=2.65 muC/cm2 and E(c) = 7.38 kV/cm. The charge storage density is highest and the leakage current density is l owest for 750-degrees-C-deposited films. They are Q(c)=1.14 muC/cm2 an d J1=0.55 muA/cm2, respectively. The results indicate that the BaTiO3 films are promising for application as high-density memory dielectrics .