PREPARATION OF A-SI1-XNXH FILM USING N-2 MICROWAVE AFTERGLOW CHEMICAL-VAPOR-DEPOSITION METHOD

Composition, deposition rate, hydrogen bond density and residual stres s of hydrogenated amorphous silicon nitride film deposited by N2 micro wave afterglow method were investigated. A slight addition of less tha n 1% of H-2 to N2 at the discharge tube showed a marked increase in de position rate at low-pressure deposition. The H-2 introduced into the discharge tube has no particular effects on the atomic bonding structu re of the film. This slight addition of H-2 served to excite the N2 re actant producing active nitrogen species efficiently. The [N]/[Si] rat io of the film deposited within the given experimental conditions was retained at more than 1.2. The film exhibited good electrical characte ristics.