PHOTOVOLTAIC SPECTRA OF HGCDTE DIODES FABRICATED BY ION-BEAM MILLING

Authors
HLIDEK P BELAS E FRANC J KOUBELE V
Citation
P. Hlidek et al., PHOTOVOLTAIC SPECTRA OF HGCDTE DIODES FABRICATED BY ION-BEAM MILLING, Semiconductor science and technology, 8(12), 1993, pp. 2069-2071
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
12
Year of publication
1993
Pages
2069 - 2071
Database
ISI
SICI code
0268-1242(1993)8:12<2069:PSOHDF>2.0.ZU;2-L
Abstract
A simple non-destructive method for investigating ion-beam-milled samp les is based on measurement of their optical absorption and photovolta ic responsivity. By comparing the two spectra, the p-n junction depth (i.e. the efficiency of ion beam milling) can be estimated.