EFFECT OF SODIUM ON GA AND AS CHEMICAL-STATES IN THE SURFACE-LAYER OFGAAS POLISHED WITH NAOCL

Authors
SOKOLOV IA KOZLOV VV TKALICH AK
Citation
Ia. Sokolov et al., EFFECT OF SODIUM ON GA AND AS CHEMICAL-STATES IN THE SURFACE-LAYER OFGAAS POLISHED WITH NAOCL, Semiconductor science and technology, 8(12), 1993, pp. 2184-2186
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
8
Issue
12
Year of publication
1993
Pages
2184 - 2186
Database
ISI
SICI code
0268-1242(1993)8:12<2184:EOSOGA>2.0.ZU;2-T
Abstract
We performed an XPS investigation of a (100) GaAs surface chemically p olished with NaOCl aqueous solutions (C(NaOCl) = 60 g l-1) containing NaOH. At C(NaOH) > 2 g l-1 the sodium adsorbate has been detected in s amples. Na adatoms are chemically bonded to Ga and As, forming, it is assumed, Na3As and NaGa(OH), phases in the surface layer. On the basis of photoemission data and our previous results we propose a model mec hanism for dissolution of GaAs in sodium hypochlorite.