COMPARISON OF GRADED AND ABRUPT JUNCTION IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS

Authors
BAQUEDANO JA LEVI AFJ JALALI B
Citation
Ja. Baquedano et al., COMPARISON OF GRADED AND ABRUPT JUNCTION IN0.53GA0.47AS HETEROJUNCTION BIPOLAR-TRANSISTORS, Applied physics letters, 64(1), 1994, pp. 67-69
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
64
Issue
1
Year of publication
1994
Pages
67 - 69
Database
ISI
SICI code
0003-6951(1994)64:1<67:COGAAJ>2.0.ZU;2-T
Abstract
We compare calculated intrinsic forward delay as a function of base th ickness and p-type doping level in n-p-n heterojunction bipolar transi stors with graded as well as abrupt Al0.48In0.52AS/In0.53Ga0.47As and InP/In0.53Ga0.47As emitter-base junctions. We find that, for a given p -type concentration and fixed base delay time, an InP/In0.53Ga0.47As a brupt junction design results in high intrinsic speed, low base resist ance, and modest power consumption.