Hu. Schreiber et al., 16GBIT S MULTIPLEXER IC USING DOUBLE MESA SI/SIGE HETEROJUNCTION BIPOLAR-TRANSISTORS/, Electronics Letters, 29(25), 1993, pp. 2185-2187
A double mesa Si/SiGe heterojunction bipolar transistor (HBT) was deve
loped for application in integrated circuits. The HBT is characterized
by an emitter base heterojunction and consequently by a high base dop
ing concentration. By using these transistors an integrated digital ci
rcuit, a multiplexer, was implemented. The measured bit rate of this f
irst Si/SiGe HBT circuit was 16Gbit/s.